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  • Part No.CSD73
    ManufacturerCDIL
    Size172 Kbytes
    Pages3 pages
    DescriptionNPN SILICON EPITAXIAL POWER TRANSISTOR
    Datasheet Summary with AI

    # CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR

    ## Product Description

    ️· Type: NPN Silicon Epitaxial Power Transistor
    ️· Package: TO-220 Plastic Package
    ️· Application: Low Frequency High Power Amplifier

    ## Absolute Maximum Ratings

    ️· VCBO: 100 V
    ️· VCEO: 60 V
    ️· VEBO: 5 V
    ️· IC: 5 A
    ️· PC: 30 W
    ️· Operating/Storage Junction Temperature: -55 to +150 ºC

    ## Electrical Characteristics (Tc = 25ºC)

    ️· VCBO: 100 V
    ️· VCEO: 60 V
    ️· VEBO: 5 V
    ️· ICBO: 0 - 5 mA
    ️· hFE (DC Current Gain): 70-240 (typical 120-240)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): - - 2.0 V (IC=5A, IB=0.5A)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): - - 1.5 V (IC=5A, IB=0.5A)
    ️· VBE(on) (Base-Emitter on Voltage): - 0.75 - V (IC=1A, VCE=10V)
    ️· fT (Current Gain Bandwidth Product): - 20 MHz (IC=0.3A, VCE=10V)

    ## Package Dimensions (TO-220)

    ️· Detailed dimensions provided in mm (A, B, C, D, E, F, G, H, J, K, L, M, N, O)
    ️· Pin Configuration:
    1. Base
    2. Collector
    3. Emitter

    ## Packing Details

    ️· Standard Pack: 200 pcs/polybag (396 gm / 3" x 7.5" x 7.5")
    ️· Tube Packing: 50 pcs/tube (135 gm / 3.5" x 3.7" x 21.5")
    ️· Ammo Pack: 1000 pcs/Ammo Pack (20 tubes/Ammo Pack)

    ## Disclaimer

    ️· CDIL does not assume responsibility for inaccuracies or liability arising from product use.
    ️· Products are not designed for life-saving applications.
    ️· Specifications are subject to change without notice.

    # CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR

    ## Product Description

    ️· Type: NPN Silicon Epitaxial Power Transistor
    ️· Package: TO-220 Plastic Package
    ️· Application: Low Frequency High Power Amplifier

    ## Absolute Maximum Ratings

    ️· VCBO: 100 V
    ️· VCEO: 60 V
    ️· VEBO: 5 V
    ️· IC: 5 A
    ️· PC: 30 W
    ️· Operating/Storage Junction Temperature: -55 to +150 ºC

    ## Electrical Characteristics (Tc = 25ºC)

    ️· VCBO: 100 V
    ️· VCEO: 60 V
    ️· VEBO: 5 V
    ️· ICBO: 0 - 5 mA
    ️· hFE (DC Current Gain): 70-240 (typical 120-240)
    ️· VCE(sat) (Collector-Emitter Saturation Voltage): - - 2.0 V (IC=5A, IB=0.5A)
    ️· VBE(sat) (Base-Emitter Saturation Voltage): - - 1.5 V (IC=5A, IB=0.5A)
    ️· VBE(on) (Base-Emitter on Voltage): - 0.75 - V (IC=1A, VCE=10V)
    ️· fT (Current Gain Bandwidth Product): - 20 MHz (IC=0.3A, VCE=10V)

    ## Package Dimensions (TO-220)

    ️· Detailed dimensions provided in mm (A, B, C, D, E, F, G, H, J, K, L, M, N, O)
    ️· Pin Configuration:
    1. Base
    2. Collector
    3. Emitter

    ## Packing Details

    ️· Standard Pack: 200 pcs/polybag (396 gm / 3" x 7.5" x 7.5")
    ️· Tube Packing: 50 pcs/tube (135 gm / 3.5" x 3.7" x 21.5")
    ️· Ammo Pack: 1000 pcs/Ammo Pack (20 tubes/Ammo Pack)

    ## Disclaimer

    ️· CDIL does not assume responsibility for inaccuracies or liability arising from product use.
    ️· Products are not designed for life-saving applications.
    ️· Specifications are subject to change without notice.

    Part No.CSD73
    ManufacturerCDIL
    Size172 Kbytes
    Pages3 pages
    DescriptionNPN SILICON EPITAXIAL POWER TRANSISTOR
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