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# CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR
## Product Description
️· Type: NPN Silicon Epitaxial Power Transistor
️· Package: TO-220 Plastic Package
️· Application: Low Frequency High Power Amplifier
## Absolute Maximum Ratings
️· VCBO: 100 V
️· VCEO: 60 V
️· VEBO: 5 V
️· IC: 5 A
️· PC: 30 W
️· Operating/Storage Junction Temperature: -55 to +150 ºC
## Electrical Characteristics (Tc = 25ºC)
️· VCBO: 100 V
️· VCEO: 60 V
️· VEBO: 5 V
️· ICBO: 0 - 5 mA
️· hFE (DC Current Gain): 70-240 (typical 120-240)
️· VCE(sat) (Collector-Emitter Saturation Voltage): - - 2.0 V (IC=5A, IB=0.5A)
️· VBE(sat) (Base-Emitter Saturation Voltage): - - 1.5 V (IC=5A, IB=0.5A)
️· VBE(on) (Base-Emitter on Voltage): - 0.75 - V (IC=1A, VCE=10V)
️· fT (Current Gain Bandwidth Product): - 20 MHz (IC=0.3A, VCE=10V)
## Package Dimensions (TO-220)
️· Detailed dimensions provided in mm (A, B, C, D, E, F, G, H, J, K, L, M, N, O)
️· Pin Configuration:
1. Base
2. Collector
3. Emitter
## Packing Details
️· Standard Pack: 200 pcs/polybag (396 gm / 3" x 7.5" x 7.5")
️· Tube Packing: 50 pcs/tube (135 gm / 3.5" x 3.7" x 21.5")
️· Ammo Pack: 1000 pcs/Ammo Pack (20 tubes/Ammo Pack)
## Disclaimer
️· CDIL does not assume responsibility for inaccuracies or liability arising from product use.
️· Products are not designed for life-saving applications.
️· Specifications are subject to change without notice.
# CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR
## Product Description
️· Type: NPN Silicon Epitaxial Power Transistor
️· Package: TO-220 Plastic Package
️· Application: Low Frequency High Power Amplifier
## Absolute Maximum Ratings
️· VCBO: 100 V
️· VCEO: 60 V
️· VEBO: 5 V
️· IC: 5 A
️· PC: 30 W
️· Operating/Storage Junction Temperature: -55 to +150 ºC
## Electrical Characteristics (Tc = 25ºC)
️· VCBO: 100 V
️· VCEO: 60 V
️· VEBO: 5 V
️· ICBO: 0 - 5 mA
️· hFE (DC Current Gain): 70-240 (typical 120-240)
️· VCE(sat) (Collector-Emitter Saturation Voltage): - - 2.0 V (IC=5A, IB=0.5A)
️· VBE(sat) (Base-Emitter Saturation Voltage): - - 1.5 V (IC=5A, IB=0.5A)
️· VBE(on) (Base-Emitter on Voltage): - 0.75 - V (IC=1A, VCE=10V)
️· fT (Current Gain Bandwidth Product): - 20 MHz (IC=0.3A, VCE=10V)
## Package Dimensions (TO-220)
️· Detailed dimensions provided in mm (A, B, C, D, E, F, G, H, J, K, L, M, N, O)
️· Pin Configuration:
1. Base
2. Collector
3. Emitter
## Packing Details
️· Standard Pack: 200 pcs/polybag (396 gm / 3" x 7.5" x 7.5")
️· Tube Packing: 50 pcs/tube (135 gm / 3.5" x 3.7" x 21.5")
️· Ammo Pack: 1000 pcs/Ammo Pack (20 tubes/Ammo Pack)
## Disclaimer
️· CDIL does not assume responsibility for inaccuracies or liability arising from product use.
️· Products are not designed for life-saving applications.
️· Specifications are subject to change without notice.
| Part No. | CSD73 |
| Manufacturer | CDIL |
| Size | 172 Kbytes |
| Pages | 3 pages |
| Description | NPN SILICON EPITAXIAL POWER TRANSISTOR |
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