# STFU15NM65N N-Channel Mosfet Transistor

## Features

· Drain Current: I D = 12A @ T C = 25℃
· Drain-Source Voltage: V DSS = 650V (Min)
· Fast Switching Speed
· 100% Avalanche Tested
· Minimum Lot-to-Lot Variations
· Applications: Switching applications

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	650	V
VGS	Gate-Source Voltage	±25	V
ID	Drain Current-continuous@ TC=25℃	12	A
IDM	Pulse Drain Current	48	A
Ptot	Total Dissipation@TC=25℃	30	W
Tj	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature Range	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	4.17	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYPE	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=1mA	650			V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=250µA	2		4	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=6A			380	mΩ
IGSS	Gate-Body Leakage Current	VGS= ±25V;VDS=0			±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=Max rating			1	µA
IDSS	Zero Gate Voltage Drain Current	VDS=Max rating;TC=125℃			100	µA
VSD	Diode Forward On-Voltage	IS=12A;VGS=0			1.6	V

## Important Notices

· ISC website: [www.iscsemi.com](http://www.iscsemi.com)
· ISC & iscsemi is a registered trademark.
· Not designed for specialized quality/reliability applications, hazardous environments, aerospace, or medical field.
· ISC makes no warranty regarding suitability for any purpose and disclaims all liability.