# 75N75 Power MOSFET

## Features
️· N-Channel Enhancement Mode
️· RDS(ON) = 12.5mΩ @VGS = 10V
️· Ultra low gate charge (typical 90nC)
️· Fast switching capability
️· Avalanche energy specified
️· Improved dv/dt capability, high ruggedness

## Ordering Information
️· Packages: TO-220, TO-220F, TO-251, TO-252
️· Lead Plating: Available with lead-free plating (suffix 'L') or standard plating.
️· Packing: Tube or Tape Reel

## Absolute Maximum Ratings
️· Drain to Source Voltage (VDSS): 75V
️· Continuous Drain Current (ID): 75A (TC=25°C), 56A (TC=100°C)
️· Pulsed Drain Current (IDM): 300A
️· Gate to Source Voltage (VGS): ±20V
️· Avalanche Energy (EAS): 900mJ
️· Peak Diode Recovery dv/dt: 15 V/ns
️· Total Power Dissipation (PD): 220W (TC=25°C), 1.4W/°C (derating)
️· Junction Temperature (TJ): +150°C
️· Storage Temperature (TSTG): -55°C to +150°C

## Thermal Data
️· Thermal Resistance Junction-Ambient (θJA): 62.5 °C/W
️· Thermal Resistance Junction-Case (θJC): 0.8 °C/W
️· Thermal Resistance Case-Sink (θCS): 0.5 °C/W

## Electrical Characteristics (TC=25°C)
️· Off Characteristics:
- Drain-Source Breakdown Voltage (BVDSS): 75V
- Drain-Source Leakage Current (IDSS): 20µA, 250µA (TJ=150°C)
️· On Characteristics:
- Gate Threshold Voltage (VGS(TH)): 2.0 - 4.0V
- Static Drain-Source On-State Resistance (RDS(ON)): 12.5 - 15 mΩ @ VGS = 10V
️· Dynamic Characteristics:
- Input Capacitance (CISS): 3300 pF
- Output Capacitance (COSS): 530 pF
- Reverse Transfer Capacitance (CRSS): 80 pF
️· Switching Characteristics:
- Turn-On Delay Time (tD(ON)): 12ns
- Rise Time (tR): 79ns
- Turn-Off Delay Time (tD(OFF)): 80ns
- Fall Time (tF): 52ns
- Total Gate Charge (QG): 90-140nC
️· Source-Drain Diode:
- Continuous Source Current (IS): 75A
- Pulsed Source Current (ISM): 300A
- Diode Forward Voltage (VSD): 1.4V

## Pin Assignments
️· 1: Gate
️· 2: Drain
️· 3: Source