# ISF1148 / STD10P10F6 P-Channel MOSFET Transistor

## Features

· Drain Current: ID = -10A @ TC = 25°C
· Drain-Source Voltage: VDSS = -100V (Min)
· Static Drain-Source On-Resistance: RDS(on) = 0.18Ω (Max) @ VGS = -10V
· Fast-recovery body diode

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	-100	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous	-10	A
IDM	Drain Current-Single Pulse (tp ≤ 10µs)	-40	A
PD	Total Dissipation @ TC=25℃	40	W
TJ	Max. Operating Junction Temperature	175	°C
Tstg	Storage Temperature	-55~175	°C

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rthj-c	Thermal Resistance, Junction to Case	3.75	°C/W

## Electrical Characteristics (TC=25°C)

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID=-0.25mA	-100	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=-100V, VGS=0V	-	-	-1	uA
IGSS	Gate-Body Leakage Current	VGS= ±20V, VDS=0V	-	-	±100	nA
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=-0.25mA	-2.0	-	-4.0	V
RDS(on)	Drain-Source On-Resistance	VGS=-10V, ID=-5A	-	-	0.18	Ω
VSD	Diode Forward Voltage	ISD=-5A, VGS=0V	-	-	-1.1	V

## Product Disclaimer

· Intended for general electronic equipment.
· Not designed for specialized quality/reliability or hazardous environments (aerospace, medical).
· Contact ISC for special application use.
· No warranty or liability assumed for product usage.
· Prohibited to reprint without permission.