# MT6L04AE Silicon NPN Transistor

## Overview
· VHF~UHF Band Low Noise Amplifier Applications
· Package: Super-thin, extreme super mini (6 pins) - ES6
· Devices: Two devices built-in

## Absolute Maximum Ratings (Ta = 25°C)
· Collector-base voltage (VCBO): 10 V
· Collector-emitter voltage (VCEO): 5 V
· Emitter-base voltage (VEBO): 2 V
· Collector current (IC): 40 mA
· Base current (IB): 10 mA
· Collector power dissipation (PC): 100 mW (total for Q1 & Q2)
· Junction temperature (Tj): 125 °C
· Storage temperature range (Tstg): −55~125 °C

## Electrical Characteristics (Ta = 25°C)
· Collector cut-off current (ICBO): 0.1 μA (max)
· Emitter cut-off current (IEBO): 1 μA (max)

· DC current gain (hFE): 80-160 (VCE = 1V, IC = 5mA)
· Transition frequency (fT): 2-7 GHz
· Insertion gain (S21): 7.5-11 dB
· Noise figure (NF): 1.2-2.2 dB
· Reverse transfer capacitance (Cre): 0.9-1.25 pF

## Handling Precautions
· Protect against electrostatic electricity when handling individual devices.
· Use anti-static clothing and materials.

## Restrictions on Product Use
· Intended for general electronics applications.
· Not intended for use in applications requiring extraordinarily high quality/reliability where malfunction could cause loss of life/injury.
· Comply with RoHS and applicable laws/regulations regarding controlled substances.