1. Product Identification

️· Product Type: Bidirectional TVS (Transient Voltage Suppressor) Array
️· Manufacturer: Microsemi (now Microchip Technology – Microsemi was acquired by Microchip)
️· Series: USB504xxC (specifically, models USB50403C, USB50405C, USB50412C, USB50415C, USB50424C)
️· Website: [http://www.microsemi.com/](http://www.microsemi.com/) (for current data - the URL may have changed now that Microsemi is part of Microchip)

2. Key Features & Benefits

️· Protection: Protects 1 bidirectional line.
️· Surge Protection: Complies with IEC 6000-4-2 and IEC 6000-4-4 standards.
️· Isolation: Provides electrically isolated protection.
️· Flammability Rating: UL 94V-0
️· RoHS Compliant: Available with RoHS compliance (indicated by "e3" suffix in part number).
️· Ultra-Low Capacitance: 3 pF per line pair. This is important for high-speed data lines.
️· Ultra-Low Leakage: Minimizes power loss when in a quiescent state.

3. Applications

️· Universal Serial Bus (USB) interfaces
️· I/O Transceivers
️· General purpose transient voltage suppression

4. Mechanical & Environmental Specifications

️· Package: Molded SOT-143 Surface Mount
️· Operating Temperature: -55°C to +150°C
️· Storage Temperature: -55°C to +150°C
️· Weight: 0.035 grams (approximate)
️· Marking: Device body is marked with the part number.
️· Pin #1 Identification: Identified by a dot on the top of the device.

5. Electrical Characteristics (Key Parameters)

Part Number	VWM (V)	VBR (@ 1mA) (V)	VC @ 1A (V)	VC @ 5A (V)	ID @ VWM (µA)	C (pF @ 1MHz)	αVBR (mV/°C)
USB50403C	3.3	4	8	11	200	3	-5
USB50405C	5.0	6.0	10.8	13	40	3	1
USB50412C	12.0	13.3	19	26	1	3	8
USB50415C	15.0	16.7	24	32	1	3	11
USB50424C	24.0	26.7	43	57	1	3	28

️· VWM (Voltage Withstand Maximum): The maximum DC voltage that the device can withstand continuously.
️· VBR (Breakdown Voltage): The voltage at which the device begins to conduct significantly.
️· VC (Clamping Voltage): The voltage across the device when it is conducting to protect the circuit. Lower clamping voltage means better protection.
️· ID (Leakage Current): The small amount of current that flows through the device when it's not actively clamping.
️· C (Capacitance): The capacitance of the device at a given frequency.
️· αVBR (Temperature Coefficient of Breakdown Voltage): How much the breakdown voltage changes with temperature.

6. Symbols and Definitions

️· VWM: Stands for "Voltage Withstand Maximum", indicates the max dc voltage that can be applied.
️· VBR: Indicates "Breakdown Voltage" at 1mA.
️· VC: Represents the "Clamping Voltage" at 1A.
️· ID: Indicates "Leakage Current" at VWM.
️· C: Represents “Capacitance” at 1MHz.
️· αVBR: Shows how the Breakdown Voltage changes with Temperature.

Important Notes:

️· Microchip Acquisition: Microsemi is now part of Microchip Technology. Check the Microchip website for the latest product information and datasheets.
️· Datasheets: This information is a summary. Always refer to the complete datasheet for detailed specifications, application notes, and other important information.
️· RoHS: “e3” indicates compliance.