# Silicon NPN Power Transistor 2SC1827

## Description

· TO-220 package
· Complement to 2SA769
· Collector Current (Ic): 4A
· Collector Dissipation (Pc): 30W @ 25°C

## Applications

· Low-frequency power amplifier applications

## Pinning

Pin	Description
1	Base
2	Collector (connected to mounting base)
3	Emitter

## Absolute Maximum Ratings (Ta=25°C)

Symbol	Parameter	Conditions	Value	Unit
VCBO	Collector-Base Voltage	Open Emitter	80	V
VCEO	Collector-Emitter Voltage	Open Base	80	V
VEBO	Emitter-Base Voltage	Open Collector	5	V
IC	Collector Current (DC)		4	A
PC	Collector Power Dissipation	TC=25°C	30	W
Tj	Junction Temperature		150	°C
Tstg	Storage Temperature		-55~150	°C

## Characteristics (Tj=25°C unless otherwise specified)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
V(BR)CEO	Collector-Emitter Breakdown Voltage	Ic=25mA; Ib=0	80			V
V(BR)CBO	Collector-Base Breakdown Voltage	Ic=0.1mA; Ie=0	80			V
V(BR)EBO	Emitter-Base Breakdown Voltage	Ie=0.1mA; Ic=0	5			V
VCEsat	Collector-Emitter Saturation Voltage	Ic=3A; Ib=0.3A			1.0	V
VBEsat	Base-Emitter Saturation Voltage	Ic=3A; Ib=0.3A			1.5	V
ICBO	Collector Cut-Off Current	Vcb=80V; Ie=0			10	μA
IEBO	Emitter Cut-Off Current	Veb=5V; Ic=0			10	μA
hFE	DC Current Gain	Ic=1A; Vce=4V	60		240
fT	Transition Frequency	Ic=0.5A; Vce=2V		8		MHz

## Package Outline

· TO-220 package
· Fig. 2 shows outline dimensions (tolerance: ±0.10 mm)