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BC846W Datasheet with Chat AI
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    Hello, Please ask a question about BC846W Datasheet

  • # Example questions: ➢ How does the collector current (ic) influence the value of the normalized hie parameter and what voltage is held constant when this relationship is examined?
    ➢ How does the frequency affect the noise figure (f) when the collector current (ic) is 0.2ma and vce is 5v?
    ➢ What is the relationship between the collector current (ic) and the hfe parameter as depicted in the provided documentation?

  • Part No.BC846W
    ManufacturerINFINEON
    Size229 Kbytes
    Pages8 pages
    DescriptionNPN Silicon AF Transistors
    Datasheet Summary with AI

    1. General Information & Dates

    ️· Transistor Series: BC 846...850 (The ellipsis indicates a range of models within the series).
    ️· Date: 6 December 2001 (likely the date of the document or a revision date)
    ️· Transistor Type: It's a BJT (Bipolar Junction Transistor)

    2. Key Electrical Characteristics - Likely (from a missing graphic)

    This section appears to be missing most of its content. It would typically include typical values for:

    ️· Collector-Emitter Voltage (VCE): Maximum voltage that can be applied.
    ️· Collector Current (IC): Maximum continuous current.
    ️· Power Dissipation (Pc): Maximum power the transistor can handle.
    ️· Transition Frequency (fT): A measure of the transistor's high-frequency performance.

    3. Parameters h (h_e and h_12, h_21 and h_22)

    ️· This section details the h-parameters, which are a set of small-signal parameters used to model the transistor's behavior. They provide a way to represent the input and output impedances, voltage gains, and current gains.
    ️· h<sub>e</sub> (h<sub>e11</sub>, h<sub>e12</sub>): Related to the transistor's input impedance and current gain.
    - Likely a function of `VCE` (appears to have a graph relating them)
    - Also a function of `Ic` (appears to have a graph relating them)
    ️· h<sub>12</sub> (h<sub>21</sub>, h<sub>22</sub>): Related to the transistor's output impedance and voltage gain.
    - Likely a function of `VCE`
    - Also a function of `Ic`

    4. Noise Figure (F)

    ️· This section explores the transistor's noise performance. Noise is unavoidable in electronic circuits, and a lower noise figure (F) indicates better performance.
    ️· F = f(VCE): The noise figure (F) is a function of the collector-emitter voltage (VCE). Likely has a graph showing this relationship. `Ic = 0.2mA`, `RS = 2kΩ`
    ️· F = f(f): The noise figure (F) is a function of the frequency (f). Likely has a graph showing this relationship. `Ic = 0.2mA`, `VCE = 5V`, `RS = 2kΩ`
    - RS = Source Resistance. This is the resistance connected to the base of the transistor.

    5. Noise Calculations (Data points)

    ️· `VCE`: Ranges from 0V to 30V.
    ️· `Ic`: Ranges from -1mA to 10mA (likely with steps).
    ️· Noise figure is a function of both VCE and frequency.

    Specific values and observations from the images:

    ️· Ic = 0.2mA is used in the noise calculations.
    ️· RS = 2kΩ (Source Resistance)
    ️· f = 1kHz (Frequency) - used in one of the noise calculations.
    ️· Data points represent calculations relating Noise figure (F) to either Voltage and Frequency

    Overall Summary & Key Takeaways:

    ️· This documentation provides a detailed analysis of the BC846-850 BJT, with a particular focus on its h-parameters (for circuit modeling) and noise figure (critical for low-noise amplifier design).
    ️· The data is presented as relationships between different electrical parameters – demonstrating the transistor's behavior under varying conditions.
    ️· The use of h-parameters provides a way to accurately model the transistor’s characteristics for circuit design and simulation.
    ️· The noise figure data enables designers to optimize the transistor’s use in applications where noise performance is paramount.
    ️· The source resistance of 2k ohms is a key factor in the noise performance calculations.

    Limitations:

    ️· Many graphs are missing, severely limiting the ability to read specific values. The descriptions above rely heavily on the textual context.
    ️· Without more complete information, it's difficult to extract precise numerical values for all the parameters.

    1. General Information & Dates

    ️· Transistor Series: BC 846...850 (The ellipsis indicates a range of models within the series).
    ️· Date: 6 December 2001 (likely the date of the document or a revision date)
    ️· Transistor Type: It's a BJT (Bipolar Junction Transistor)

    2. Key Electrical Characteristics - Likely (from a missing graphic)

    This section appears to be missing most of its content. It would typically include typical values for:

    ️· Collector-Emitter Voltage (VCE): Maximum voltage that can be applied.
    ️· Collector Current (IC): Maximum continuous current.
    ️· Power Dissipation (Pc): Maximum power the transistor can handle.
    ️· Transition Frequency (fT): A measure of the transistor's high-frequency performance.

    3. Parameters h (h_e and h_12, h_21 and h_22)

    ️· This section details the h-parameters, which are a set of small-signal parameters used to model the transistor's behavior. They provide a way to represent the input and output impedances, voltage gains, and current gains.
    ️· h<sub>e</sub> (h<sub>e11</sub>, h<sub>e12</sub>): Related to the transistor's input impedance and current gain.
    - Likely a function of `VCE` (appears to have a graph relating them)
    - Also a function of `Ic` (appears to have a graph relating them)
    ️· h<sub>12</sub> (h<sub>21</sub>, h<sub>22</sub>): Related to the transistor's output impedance and voltage gain.
    - Likely a function of `VCE`
    - Also a function of `Ic`

    4. Noise Figure (F)

    ️· This section explores the transistor's noise performance. Noise is unavoidable in electronic circuits, and a lower noise figure (F) indicates better performance.
    ️· F = f(VCE): The noise figure (F) is a function of the collector-emitter voltage (VCE). Likely has a graph showing this relationship. `Ic = 0.2mA`, `RS = 2kΩ`
    ️· F = f(f): The noise figure (F) is a function of the frequency (f). Likely has a graph showing this relationship. `Ic = 0.2mA`, `VCE = 5V`, `RS = 2kΩ`
    - RS = Source Resistance. This is the resistance connected to the base of the transistor.

    5. Noise Calculations (Data points)

    ️· `VCE`: Ranges from 0V to 30V.
    ️· `Ic`: Ranges from -1mA to 10mA (likely with steps).
    ️· Noise figure is a function of both VCE and frequency.

    Specific values and observations from the images:

    ️· Ic = 0.2mA is used in the noise calculations.
    ️· RS = 2kΩ (Source Resistance)
    ️· f = 1kHz (Frequency) - used in one of the noise calculations.
    ️· Data points represent calculations relating Noise figure (F) to either Voltage and Frequency

    Overall Summary & Key Takeaways:

    ️· This documentation provides a detailed analysis of the BC846-850 BJT, with a particular focus on its h-parameters (for circuit modeling) and noise figure (critical for low-noise amplifier design).
    ️· The data is presented as relationships between different electrical parameters – demonstrating the transistor's behavior under varying conditions.
    ️· The use of h-parameters provides a way to accurately model the transistor’s characteristics for circuit design and simulation.
    ️· The noise figure data enables designers to optimize the transistor’s use in applications where noise performance is paramount.
    ️· The source resistance of 2k ohms is a key factor in the noise performance calculations.

    Limitations:

    ️· Many graphs are missing, severely limiting the ability to read specific values. The descriptions above rely heavily on the textual context.
    ️· Without more complete information, it's difficult to extract precise numerical values for all the parameters.

    Part No.BC846W
    ManufacturerINFINEON
    Size229 Kbytes
    Pages8 pages
    DescriptionNPN Silicon AF Transistors
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