2SD882S-E-AB3-B / Unisonic Technologies

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Part No.	2SD882S-E-AB3-B
Manufacturer	UTC
Size	75 Kbytes
Pages	4 pages
Description	MEDIUM POWER LOW VOLTAGE TRANSISTOR

Datasheet Summary with AI

# 2SD882S NPN SILICON TRANSISTOR

## Features
· High current output up to 3A
· Low saturation voltage
· Complement to 2SB772S

## Applications
· Audio power amplifier
· DC-DC convertor
· Voltage regulator

## Ordering Information
· Packages: SOT-223, SOT-89, TO-92
· Lead Plating: Available with Lead (Pb) and Lead-Free (L) options.
· Packing: Tape Reel, Tape Box, Bulk
· Rank: Q (100-200 hFE2), P (160-320 hFE2), E (200-400 hFE2)

## Absolute Maximum Ratings
· Collector-Base Voltage (VCBO): 40V
· Collector-Emitter Voltage (VCEO): 30V
· Emitter-Base Voltage (VEBO): 5V
· Collector Current (IC): 3A (Pulse: 7A)
· Base Current (IB): 0.6A
· Power Dissipation (PD): 0.5W (TO-92, SOT-89), 1W (SOT-223)
· Junction Temperature (TJ): +150°C
· Storage Temperature (TSTG): -55°C to +150°C

## Electrical Characteristics (Ta=25°C)
· BV CBO: 40V
· BV CEO: 30V
· BV EBO: 5V
· ICBO: 1000nA
· IEBO: 1000nA
· hFE1 (IC=20mA): 30-200
· hFE2 (IC=1A): 100-400
· VCE(SAT) (IC=2A, IB=0.2A): 0.3-0.5V
· VBE(SAT) (IC=2A, IB=0.2A): 1.0-2.0V
· fT (VCE=5V, IC=0.1A): 80 MHz
· Cob (VCB=10V, IE=0, f=1MHz): 45 pF