| Manufacturer | Part # | Datasheet | Description |
Stanson Technology
|
8050S |
89Kb/1P |
NPN TRANSISTOR |
| D965 |
80Kb/1P |
NPN TRANSISTOR |
| D2152 |
79Kb/1P |
NPN TRANSISTOR |
| 8050 |
90Kb/1P |
NPN TRANSISTOR |
| C945 |
80Kb/1P |
NPN TRANSISTOR |
| D2150 |
80Kb/1P |
NPN TRANSISTOR |
| STP9235 |
331Kb/6P |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STP4403 |
321Kb/6P |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STP9434 |
314Kb/6P |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STN4488L |
644Kb/7P |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. |
| STP4931 |
334Kb/6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. |
| STN9926AA |
233Kb/7P |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. |
| STN4822 |
516Kb/6P |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. |
| STN9926 |
648Kb/7P |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. |
British ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
New Zealand
