| Manufacturer | Part # | Datasheet | Description |

WOLFSPEED, INC.
|
C3M0025065D |
1,016Kb/11P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev 1, 12-2020 |
| C3M0030090K |
1Mb/11P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. 4, 01-2021 |
| C2M0160120D |
645Kb/10P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Rev. 5, 04-2021 |
| C3M0045065K |
1Mb/12P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev 1, 12-2020 |
| C3M0075120D |
940Kb/10P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. 3, 01-2021 |
| C3M0075120K |
934Kb/11P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. 5, 01-2021 |
| C3M0120065D |
929Kb/11P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev 1, 01-2021 |
| CPM2-1200-0025A |
569Kb/7P |
Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Rev. 1, 01-202 |
| CPM3-1200-0013A |
484Kb/7P |
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. 2, 02-2020 |
| C3M0350120D |
729Kb/10P |
C3M0350120D Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Rev. A, 03-2020 |
| E4D10120A |
1Mb/9P |
E-Series Automotive 4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode Rev. 1, March 2023 |
| CAB400M12XM3 |
801Kb/9P |
1200 V, 400 A All-Silicon Carbide Switching-Loss Optimized, Half-Bridge Module Rev. -, 2019-10-31 |
| CAS480M12HM3 |
1Mb/11P |
1200 V, 480 A, Silicon Carbide High-Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2022-02-25 |
| E4D20120A |
1Mb/9P |
E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Rev. 1, April 2023 |
| CAS300M12BM2 |
776Kb/11P |
1200 V, 300 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 2, 2021-02-08 |
| CGHV38375F |
1Mb/22P |
400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN-on-Silicon Carbide Transistor (IM-FET) Rev. 1.0, 2022-10-12 |
| CAS120M12BM2 |
968Kb/11P |
1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Rev. 1, 2020-11-11 |
| EAB450M12XM3 |
1Mb/11P |
Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module Rev. A 2020-10-07 |
| WAB300M12BM3 |
1Mb/12P |
1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Rev. A 2020-05-20 |
| WAB400M12BM3 |
1Mb/12P |
1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module Rev. A 2020-05-22 |