FQP50N06 Datasheet(PDF)

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FQP50N06 Datasheet (PDF) - Fairchild Semiconductor


Part #	FQP50N06

Download	FQP50N06 Download

File Size	647.45 Kbytes

Page	8 Pages

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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Description

60V LOGIC N-Channel MOSFET

FQP50N06 Datasheet (PDF)

Download Datasheet


Part #	FQP50N06

Download	FQP50N06 Click to download

File Size	647.45 Kbytes

Page	8 Pages

Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

Description	60V LOGIC N-Channel MOSFET

FQP50N06 Datasheet (HTML) - Fairchild Semiconductor

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FQP50N06 Product details

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 52.4 A, 60 V, Rds(on)= 21 mΩ(Max.) @ Vgs= 10V Id= 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

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Similar Description - FQP50N06

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About Fairchild Semiconductor

Fairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s.
The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology.
Fairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products.
The company was acquired by ON Semiconductor in 2016 and its products and technologies continue to be developed and sold under the ON Semiconductor brand.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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