RA4M1 datasheet(113/130 Pages) RENESAS

113 / 130 page

R01DS0355EJ0100 Rev.1.00

Page 113 of 130

Oct 8, 2019

RA4M1 Group

2. Electrical Characteristics

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing the flash memory. When using FCLK at below

4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of FCLK must be ±3.5%. Confirm the frequency accuracy of the clock source.

2.15.2

Data Flash Memory Characteristics

Note 1.

The reprogram/erase cycle is the number of erasure for each block. When the reprogram/erase cycle is n times (n = 100,000),

erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1,000 times for different

addresses in 1-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasure is not enabled. Overwriting is prohibited.

Note 2.

Characteristics when using the flash memory programmer and the self-programming library provided by Renesas Electronics.

Note 3.

These results are obtained from reliability testing.

Note:

Does not include the time until each operation of the flash memory is started after instructions are executed by software.

Note:

The lower-limit frequency of FCLK is 1 MHz during programming or erasing the flash memory. When using FCLK at below

4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.

Note:

The frequency accuracy of FCLK must be ±3.5%. Confirm the frequency accuracy of the clock source.

Table 2.71

Code flash characteristics (3)

Middle-speed operating mode

Conditions: VCC = 1.8 to 5.5 V, Ta = -40 to +85°C

Parameter

Symbol

FCLK = 1 MHz

FCLK = 8 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

8-byte

tP8

157

1411

101

966

μs

Erasure time

2-KB

tE2K

9.10

289

6.10

228

Blank check time

8-byte

tBC8

87.7

52.5

μs

2-KB

tBC2K

1930

414

μs

Erase suspended time

tSED

32.7

21.6

μs

Startup area switching setting time

tSAS

22.5

592

14.0

464

Access window time

tAWS

22.5

592

14.0

464

OCD/serial programmer ID setting time

tOSIS

22.5

592

14.0

464

Flash memory mode transition wait time 1 tDIS

--2

--μs

Flash memory mode transition wait time 2 tMS

720

Table 2.72

Data flash characteristics (1)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Reprogramming/erasure cycle*1

NDPEC

100,000

1,000,000

Times

Data hold time

After 10,000 times of NDPEC

tDDRP

20*2, *3

Year

Ta = +85°C

After 100,000 times of NDPEC

5*2, *3

Year

After 1,000,000 times of

NDPEC

-1*2, *3

Year

Ta = +25°C

Table 2.73

Data flash characteristics (2)

High-speed operating mode

Conditions: VCC = 2.7 to 5.5 V

Parameter

Symbol

FCLK = 4 MHz

FCLK = 32 MHz

Unit

Min

Typ

Max

Min

Typ

Max

Programming time

1-byte

tDP1

52.4

463

42.1

387

μs

Erasure time

1-KB

tDE1K

8.98

286

6.42

237

Blank check time

1-byte

tDBC1

24.3

16.6

μs

1-KB

tDBC1K

1872

512

μs

Suspended time during erasing

tDSED

13.0

10.7

μs

Data flash STOP recovery time

tDSTOP

μs

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