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ST10F272 Datasheet(PDF) 135 Page - STMicroelectronics

Part # ST10F272
Description  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  179 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST10F272 Datasheet(HTML) 135 Page - STMicroelectronics

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ST10F272
Electrical characteristics
135/179
24.6
Flash characteristics
VDD = 5 V ± 10%, VSS = 0 V
Table 64.
Flash characteristics
Parameter
Typical
Maximum
Unit
Notes
TA = 25°C
TA = 125°C
0 cycles(1)
0 cycles(1)
100k cycles
Word Program (32-bit) (2)
35
80
290
µs–
Double Word Program (64-bit)(2))
60
150
570
µs–
Bank 0 Program (256K)
(Double Word Program)
1.6
2.0
3.9
s
–
Sector Erase (8K)
0.6
0.5
0.9
0.8
1.0
0.9
s
not preprogrammed
preprogrammed
Sector Erase (32K)
1.1
0.8
2.0
1.8
2.7
2.5
s
not preprogrammed
preprogrammed
Sector Erase (64K)
1.7
1.3
3.7
3.3
5.1
4.7
s
not preprogrammed
preprogrammed
Bank 0 Erase (256K) (3)
5.6
4.0
13.6
11.9
19.2
17.5
s
not preprogrammed
preprogrammed
Recovery from Power-Down (tPD)–
40
40
µs
(4)
Program Suspend Latency (4)
–10
10
µs
Erase Suspend Latency (4)
–30
30
µs
Erase Suspend Request Rate (4)
20
20
20
ms
Min delay between 2
requests
Set Protection (4)
40
90
300
µs
1.
The figures are given after about 100 cycles due to testing routines (0 cycles at the final customer).
2.
Word and Double Word Programming times are provided as average values derived from a full sector programming time:
absolute value of a Word or Double Word Programming time could be longer than the average value.
3.
Bank Erase is obtained through a multiple Sector Erase operation (setting bits related to all sectors of the Bank). As
ST10F272 implements only one bank, the Bank Erase operation is equivalent to Module and Chip Erase operations.
4.
Not 100% tested, guaranteed by Design Characterization.



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