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STM32F412RGT6PTR Datasheet(PDF) 153 Page - STMicroelectronics |
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STM32F412RGT6PTR Datasheet(HTML) 153 Page - STMicroelectronics |
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153 / 201 page  DocID028087 Rev 7 153/201 STM32F412xE/G Electrical characteristics 166 Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms 1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used. Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 3 THCLK - 1 3 THCLK +0.5 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK + 0.5 THCLK + 0.5 tw(NWE) FSMC_NWE low time THCLK – 1.5 THCLK+ 1 th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK - 1 - tv(A_NE) FSMC_NEx low to FSMC_A valid - 0.5 th(A_NWE) Address hold time after FSMC_NWE high THCLK - 0.5 - tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1 th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK - 1 - tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK + 2 th(Data_NWE) Data hold time after FSMC_NWE high THCLK + 0.5 - tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 1 tw(NADV) FSMC_NADV low time - THCLK+ 0.5 |
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