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STM32F412RGY3PTR Datasheet(PDF) 154 Page - STMicroelectronics |
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STM32F412RGY3PTR Datasheet(HTML) 154 Page - STMicroelectronics |
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154 / 201 page ![]() Electrical characteristics STM32F412xE/G 154/201 DocID028087 Rev 7 Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms 1. CL = 30 pF. 2. Based on characterization, not tested in production. Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR write - NWAIT timings(1)(2) 1. CL = 30 pF. 2. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 8THCLK - 1 8THCLK + 0.5 ns tw(NWE) FSMC_NWE low time 6THCLK + 0.5 6THCLK + 1 tsu(NWAIT_NE) FSMC_NWAIT valid before FSMC_NEx high 6THCLK + 0.5 - th(NE_NWAIT) FSMC_NEx hold time after FSMC_NWAIT invalid 4THCLK + 1 - |
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