STM32F412RGT7TR datasheet(111/201 Pages) STMICROELECTRONICS

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STM32F412xE/G

Electrical characteristics

166

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

For information about the LSE high-power mode, refer to the reference manual RM0383.

Figure 30. Typical application with a 32.768 kHz crystal

6.3.9

Internal clock source characteristics

The parameters given in Table 43 and Table 44 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 16.

High-speed internal (HSI) RC oscillator

2. This parameter depends on the crystal used in the application. Refer to the application note AN2867.

3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized

32.768 kHz oscillation is reached. This value is guaranteed by characterization and not tested in

production. It is measured for a standard crystal resonator and it can vary significantly with the crystal

manufacturer.

Table 43. HSI oscillator characteristics (1)

Symbol

Parameter

Conditions

Min

Typ Max Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

HSI user trimming step(2)

Factory-calibrated

TA = -40 to 125 °C(3)

-8

5.5

TA = -40 to 105 °C(3)

-8

4.5

TA = -10 to 85 °C(3)

-4

TA = 25 °C(4)

-1

tsu(HSI)(2) HSI oscillator startup time

2.2

µs

IDD(HSI)(2)

HSI oscillator power

consumption

µA

1. VDD = 3.3 V, TA = -40 to 125 °C unless otherwise specified.

2. Guaranteed by design, not tested in production

3. Based on characterization, not tested in production

4. Factory calibrated, parts not soldered.

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