STM32F412RGH3TR datasheet(148/201 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F412xE/G

148/201

DocID028087 Rev 7

6.3.22

VBAT monitoring characteristics

6.3.23

Embedded reference voltage

The parameters given in Table 81 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 16.

Table 80. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50-

Ratio on VBAT measurement

Er(1)

Error on Q

–1

TS_vbat(2)(2)

ADC sampling time when reading the VBAT

1 mV accuracy

µs

1. Guaranteed by design, not tested in production.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 81. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

- 40 °C < TA < +125 °C 1.18

1.21

1.24

TS_vrefint(1)

ADC sampling time when reading the

internal reference voltage

-10

µs

VRERINT_s(2)

Internal reference voltage spread over the

temperature range

VDD = 3V ± 10mV

TCoeff(2)

Temperature coefficient

ppm/°C

tSTART(2)

Startup time

µs

1. Shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design, not tested in production

Table 82. Internal reference voltage calibration values

Symbol

Parameter

Memory address

VREFIN_CAL

Raw data acquired at temperature of

30 °C VDDA = 3.3 V

0x1FFF 7A2A - 0x1FFF 7A2B

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