H8SXSLASH1663M datasheet(1179/1504 Pages) RENESAS

1179 / 1504 page

Section 25 Flash Memory

Rev. 2.00 Sep. 24, 2008 Page 1147 of 1468

REJ09B0412-0200

25.8.3

User Program Mode

Programming/erasure of the user MAT is executed by downloading an on-chip program. The user

boot MAT cannot be programmed/erased in user program mode. The programming/erasing flow is

shown in figure 25.11.

Since high voltage is applied to the internal flash memory during programming/erasure, a

transition to the reset state or hardware standby mode must not be made during

programming/erasure. A transition to the reset state or hardware standby mode during

programming/erasure may damage the flash memory. If a reset is input, the reset must be released

after the reset input period (period of

RES = 0) of at least 100 µs.

When programming,

program data is prepared

Programming/erasing

procedure program is

transferred to the on-chip

RAM and executed

Programming/erasing

start

Programming/erasing

end

Exit RAM emulation mode beforehand. Download is not allowed

in emulation mode.

When the program data is adjusted in emulation mode, select

the download destination specified by FTDAR carefully. Make

sure that the download area does not overlap the emulation

area.

Programming/erasing is executed only in the on-chip RAM.

After programming/erasing is finished, protect the flash memory

by the hardware protection.

Figure 25.11 Programming/Erasing Flow

H8SX/1663M Datasheet(PDF) 1179 Page - Renesas Technology Corp