TPCA8036-H datasheet(3/7 Pages) TOSHIBA

Part #	TPCA8036-H

Description	Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCA8036-H

2008-08-18

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 0.5 mA

1.3

⎯

2.3

V

VGS = 4.5 V, ID = 19 A

⎯

3.4

4.8

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 19 A

⎯

2.8

4.2

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 19 A

57

113

⎯

S

Input capacitance

Ciss

⎯

3500

4600

Reverse transfer capacitance

Crss

⎯

230

370

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

690

⎯

pF

Gate resistance

rg

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

1.0

1.5

Ω

Rise time

tr

⎯

4.7

⎯

Turn-on time

ton

⎯

14

⎯

Fall time

tf

⎯

7.7

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

48

⎯

ns

VDD ≈ 24 V, VGS = 10 V, ID = 38 A

⎯

50

⎯

Total gate charge

(gate-source plus gate-drain)

Qg

VDD ≈ 24 V, VGS = 5 V, ID = 38 A

⎯

26

⎯

Gate-source charge 1

Qgs1

⎯

11

⎯

Gate-drain (“Miller”) charge

Qgd

⎯

7.8

⎯

Gate switch charge

QSW

VDD ≈ 24 V, VGS = 10 V, ID = 38 A

⎯

13

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

114

A

Forward voltage (diode)

VDSF

IDR = 38 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 15 V

0 V

VGS

10 V

ID = 19A

VOUT

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