Photodiode

Preliminary

6/28/2007

rev. 02/07

Wavelength

Infrared

Miscellaneous Parameters

Symbol

Value

Unit

A

0.62

mm²

5

%/K

-20 to +85

°C

-40 to +125

°C

260

°C

ϕ

20

deg.

Optical and Electrical Characteristics

Parameter

Test conditions

Symbol

Min

Typ

Max

Unit

Breakdown voltage

1)

5

V

Dark current

40

200

pA

Peak sensitivity wavelength

λ

p

740

nm

Responsivity at

λ

P

0.5

A/W

Spectral range at 10 %

λ

0.5

680

770

nm

Spectral bandwidth at 50%

∆λ

0.4

80

nm

Shunt resistance

300

G

Ω

Noise equivalent power

λ = 740 nm

NEP

7.2x10

-15

Specific detectivity

λ = 740 nm

D*

1.1x10

13

Junction capacitance

120

pF

)

170

ns

Photo-current at

λ

P

2)

15

µA

Note: All measurements carried out with EPIGAP equipment

Labeling

Type

Lot N°

EPD-740-5-0.9

Note: Special packages with standoff available on request

Applications

Description

Selective photodiode mounted in standard 5 mm

package without standoff. Narrow response

range (740 nm peak) by means of integrated filter

Active area

Operating temperature range

Storage temperature range

Soldering Temperature

EPD-740-5-0.9

Type

Parameter

Case

5 mm plastic lens

Technology

AlGaAs/GaAs

water clear

Optical communications, safety equipment, light

barriers

Quantity

Test сonditions

t

≤ 3 s, 3 mm from case

9

- 0,5

31,8

- 1,7

2

- 1,0

1,1

- 0,1

0,6

- 0,2

6

- 0,3

Anode

Hz

W/

1

W

Hz

cm

−

⋅

⋅

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

1 of 2