STM32F407IGH6 datasheet(112/185 Pages) STMICROELECTRONICS

112 / 185 page

Electrical characteristics

STM32F405xx, STM32F407xx

112/185

DocID022152 Rev 4

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the ambient temperature and VDD supply voltage conditions summarized

in Table 14.

Table 49. I/O AC characteristics(1)(2)(3)

OSPEEDRy

[1:0] bit

value(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fmax(IO)out Maximum frequency(4)

CL = 50 pF, VDD > 2.70 V

MHz

CL = 50 pF, VDD > 1.8 V

CL = 10 pF, VDD > 2.70 V

TBD

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF, VDD = 1.8 V to

3.6 V

TBD

tr(IO)out

Output low to high level rise

time

TBD

fmax(IO)out Maximum frequency(4)

CL = 50 pF, VDD > 2.70 V

MHz

CL = 50 pF, VDD > 1.8 V

12.5(5)

CL = 10 pF, VDD > 2.70 V

50(5)

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF, VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

tr(IO)out

Output low to high level rise

time

CL = 50 pF, VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

fmax(IO)out Maximum frequency(4)

CL = 40 pF, VDD > 2.70 V

50(5)

MHz

CL = 40 pF, VDD > 1.8 V

CL = 10 pF, VDD > 2.70 V

100(5)

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF,

2.4 < VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

tr(IO)out

Output low to high level rise

time

CL = 50 pF,

2.4 < VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

STM32F407IGH6 Datasheet(PDF) 112 Page - STMicroelectronics

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