HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. :HE9526-A

Issued Date : 1998.07.01

Revised Date : 2000.10.01

Page No. : 1/2

HSMC Product Specification

HM3019

NPN EPITAXIAL PLANAR TRANSISTOR

Description

This device is designed for use as general purpose amplifier and

switching requiring collector currents 1A

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................... 1.2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 140 V

VCEO Collector to Emitter Voltage ..................................................................................... 80 V

VEBO Emitter to Base Voltage ............................................................................................. 7 V

IC Collector Current .............................................................................................................. 1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

140

-

-

V

IC=100uA

BVCEO

80

-

-

V

IC=30mA

BVEBO

7

-

-

V

IE=100uA

ICBO

-

-

50

nA

VCB=90V

IEBO

-

-

50

nA

VEB=5V

*VCE(sat)

-

-

0.2

V

IC=150mA, IB=15mA

*VBE(sat)

-

-

1.1

V

IC=150mA, IB=15mA

*hFE1

50

-

-

IC=0.1mA, VCE=10V

*hFE2

90

-

-

IC=10mA, VCE=10V

*hFE3

100

-

300

IC=150mA, VCE=10V

*hFE4

50

-

-

IC=500mA, VCE=10V

*hFE5

15

-

-

IC=1000mA, VCE=10V

fT

100

-

-

MHz

IC=50mA, VCE=10V, f=100MHz

Cob

-

-

12

pF

VCE=10V, f=1MHz, IE=0

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%