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Die Characteristics

DIE DIMENSIONS:

83 mils x 108 mils x 19 mils

INTERFACE MATERIALS:

Glassivation:

Type: Nitride

Thickness: 7k

Å

Top Metallization:

Type: Al

Thickness: 16k

Å

Substrate:

CMOS, DI

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Floating

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

253

Metallization Mask Layout

HS-0548RH

HS-0549RH

NOTE: Pad Numbers Correspond to DIP Pin Numbers Only

IN 6

IN 7

IN 8

OUT

IN 4

IN 3

IN 5

+V

GND

IN 2

IN 1

-V

A2

A1

A0

EN

IN3B IN4B OUT B

OUT A

IN4A IN3A

IN2A

IN1A

V-

IN2B

IN1B

+V

GND

A1

A0

EN

HS-0548RH, HS-0549RH