SSPS7331P_15 datasheet(2/1 Pages) SECOS

2 / 1 page

Elektronische Bauelemente

SSPS7331P

-13.4 A , -30 V , RDS(ON) 13 m

P-Ch Enhancement Mode Power MOSFET

24-Oct-2013 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

-1

VDS=VGS, ID= -250μA

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±25V

-1

VDS= -24V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-25

μA

VDS= -24V, VGS=0, TJ=55°C

On-State Drain Current

ID(on)

-6.7

VDS= -5V, VGS= -10V

VGS= -10V, ID= -10.7A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID= -8.9A

Forward Transconductance

gfs

VDS= -15V, ID= -10.7A

Diode Forward Voltage

VSD

-0.75

IS= -2.3A, VGS=0

Dynamic

Input Capacitance

Ciss

2186

Output Capacitance

Coss

373

Reverse Transfer Capacitance

Crss

336

VDS= -15V

VGS= 0V

f= 1MHz

Total Gate Charge

Gate-Source Charge

Qgs

7.8

Gate-Drain Charge

Qgd

VDS= -15 V,

VGS= -4.5 V,

ID= -10.7 A

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

VDD= -15V

ID= -10.7A

VGEN= -10V

RGEN=6Ω

RL=1.5Ω

Notes:

Pulse test：PW ≦ 300μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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