# 2SA1953

## General Description

️· Silicon PNP Epitaxial Type (PCT process)
️· For general-purpose amplifier and switching applications

## Absolute Maximum Ratings

️· Collector-Base Voltage (VCBO): -15 V
️· Collector-Emitter Voltage (VCEO): -12 V
️· Emitter-Base Voltage (VEBO): -5 V
️· Collector Current (IC): -500 mA
️· Base Current (IB): -50 mA
️· Collector Power Dissipation (PC): 150 mW
️· Junction Temperature (Tj): 125 °C
️· Storage Temperature Range (Tstg): -55 to 125 °C

## Electrical Characteristics (Ta = 25°C)

️· DC Current Gain (hFE): 300-1000 (VCE = -2V, IC = -10mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)(1)): -15 mV typ. (IC = -10mA, IB = -0.5mA)
️· Collector-Emitter Saturation Voltage (VCE(sat)(2)): -110 mV typ. (IC = -200mA, IB = -10mA)
️· Base-Emitter Saturation Voltage (VBE(sat)): -0.87 V typ. (IC = -200mA, IB = -10mA)
️· Transition Frequency (fT): 80-130 MHz (VCE = -2V, IC = -10mA)
️· Collector Output Capacitance (Cob): 4.2 pF typ. (VCB = -10V, IE = 0, f = 1 MHz)
️· Collector-Emitter On Resistance (Ron): 0.9 Ω typ. (IB = -1 mA, Vin = -1Vrms, f = 1 kHz)

## Switching Times

️· Turn-on time (ton): 40 ns typ.
️· Storage time (tstg): 280 ns typ.
️· Fall time (tf): 45 ns typ.

## Important Notes

️· Restrictions on product use apply - see documentation for details
️· Product is for general electronic applications only
️· No liability assumed for customer product design or applications
️· Follow all applicable laws and regulations.