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2SA1953 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA1953
Description  General Purpose Amplifier Applications Switching and Muting Switch Application
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1953 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA1953
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −15 V, IE = 0
−0.1
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−0.1
μA
DC current gain
hFE
(Note)
VCE = −2 V, IC = −10 mA
300
1000
VCE (sat) (1)
IC = −10 mA, IB = −0.5 mA
−15
−30
Collector-emitter saturation voltage
VCE (sat) (2)
IC = −200 mA, IB = −10 mA
−110
−250
mV
Base-emitter saturation voltage
VBE (sat)
IC = −200 mA, IB = −10 mA
−0.87
−1.2
V
Transition frequency
fT
VCE = −2 V, IC = −10 mA
80
130
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
4.2
pF
Collector-emitter on resistance
Ron
IB = −1 mA, Vin = −1 Vrms, f = 1 kHz
0.9
Ω
Turn-on time
ton
40
Storage time
tstg
280
Switching time
Fall time
tf
IB1 = −IB2 = −5 mA
45
ns
Note: hFE classification A: 300~600, B: 500~1000



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