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STQ1NK60ZR-AP Datasheet (PDF) - STMicroelectronics
STQ1NK60ZR-AP Datasheet PDF - STMicroelectronics
Part # STQ1NK60ZR-AP
Download  STQ1NK60ZR-AP Download
File Size   657.29 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

STQ1NK60ZR-AP Datasheet (PDF)

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STQ1NK60ZR-AP Datasheet PDF - STMicroelectronics

Part # STQ1NK60ZR-AP
Download  STQ1NK60ZR-AP Click to download

File Size   657.29 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET

STQ1NK60ZR-AP Datasheet (HTML) - STMicroelectronics


STQ1NK60ZR-AP Product details

Description

This device is a N-channel SuperMESH™ that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This seriescomplement STs’ full range of high voltage Power MOSFETs.



■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ ESD improved capability

■ New high voltage benchmark



Application

Switching applications

 




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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