General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 110 MHz band.
Features and benefits
 Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 μs with δ of 20 %:
 Output power = 1200 W
 Power gain = 28.5 dB
 Efficiency = 75 %
 Easy power control
 Integrated ESD protection
 Excellent ruggedness
 High efficiency
 Excellent thermal stability
 Designed for broadband operation (10 MHz to 110 MHz)
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 Industrial, scientific and medical applications
 FM transmitter applications