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TJ3 Datasheet (PDF) - Vishay Siliconix
TJ3 Datasheet PDF - Vishay Siliconix
Part # TJ3
Download  TJ3 Download
File Size   112.8 Kbytes
Page   8 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Inductors, Toroid, High Current, Radial Leaded

TJ3 Datasheet (PDF)

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TJ3 Datasheet PDF - Vishay Siliconix

Part # TJ3
Download  TJ3 Click to download

File Size   112.8 Kbytes
Page   8 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Inductors, Toroid, High Current, Radial Leaded

TJ3 Datasheet (HTML) - Vishay Siliconix


TJ3 Product details

FEATURES
• Printed circuit mounting
• Wide range of inductance and current ratings
• Toroid design reduces EMI
• Vertical or horizontal mounting to optimize
P.C. board layout
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

APPLICATION
Switching power supplies, EMI/RFI filtering, output chokes




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About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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