Industrial Inverter
MOS FET / IGBT Gate Driver
IH(Induction Heating)
Operate at high ambient temperatures up to 110°C

The Toshiba TLP151 consists of an infrared LED and integrated high gain,
high-speed photodetectors. The TLP151 is housed in the SO6 package.
The photodetector has an internal Faraday shield that provides a guaranteed
common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct
gate driving circuit for IGBTs or power MOSFETs.

 Buffer logic type (Totem pole output)
 Package type: SO6
 Peak Output Current : IOP = ±0.6 A (max)
 Guaranteed performance over temperature: -40 to 110°C
 Power supply voltage: 10 to 30 V
 Threshold Input Current: IFLH = 5.0 mA (max)
 Propagation delay time : tpLH / tpHL = 700 ns (max)
 Common mode transient immunity : ±15 kV/μs （min）
 Isolation voltage : 3750 Vrms (min)
 UL-recognized : UL 1577, File No.E67349
 cUL-recognized : CSA Component Acceptance Service No.5A
File No.E67349
 VDE-approved ：EN 60747-5-5 ,EN 62368-1 (Note 1)