| Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
PDTD123T
|
67Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
Rev. 02-21 July 2005 |
Nexperia B.V. All right... |
PDTD123YT-Q
|
221Kb / 11P |
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
22 July 2022 |
|
PDTB123ET
|
374Kb / 11P |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 3 - 22 September 2010 |
|
PDTB123TT
|
353Kb / 11P |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
Rev. 4 - 8 November 2010 |
|
PDTB123YT-Q
|
222Kb / 10P |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
25 February 2022 |
|
PDTC123E_SERIES
|
420Kb / 15P |
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2004 Aug |
|
PDTD113E_SER
|
245Kb / 11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 - 16 November 2009 |
|
PDTD123E_SER
|
245Kb / 11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009 |
|
PDTD123Y_SER
|
246Kb / 11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 - 16 November 2009 |
|
PEMH20
|
283Kb / 9P |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 04 - 15 November 2009 |
British ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
New Zealand
