Description
The NCE3013J uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =13A
RDS(ON) <12mΩ @ VGS=10V
RDS(ON) <20mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply