Description
The NCE20P10J uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.
General Features
● VDS = -20V,ID = -10A
RDS(ON) < 32mΩ @ VGS=-2.5V
RDS(ON) < 25mΩ @ VGS=-4.5V
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge
Application
● PWM applications
● Load switch
● Battery charge in cellular handset