Description
Wolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added
efficiency in comparison to other technologies. GaN has superior
properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to GaAs transistors. This
IM FET is available in a metal/ceramic flanged package for optimal
electrical and thermal performance.
Features
• 7.9 - 8.4 GHz Operation
• 80 W POUT typical
• >13 dB Power Gain
• 33% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Satellite Communications
• Terrestrial Broadband