Description
Wolfspeed’s CMPA1C1D060D is a gallium nitride (GaN) High
Electron Mobility Transistor (HEMT) based monolithic microwave
integrated circuit (MMIC) on a Silicon Carbide substrate, using a
0.25 μm gate length fabrication process. GaN-on-SiC has superior
properties compared to silicon, gallium arsenide or GaN-on-Si,
including higher breakdown voltage, higher saturated electron drift
velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si, GaAs,
and GaN-on-Si transistors.
Features
• 26 dB Small Signal Gain
• 60 W Typical PSAT
• Operation up to 40 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.209 x 0.240 x 0.004 inches
Applications
• Satellite Communications Uplink
• PTP Radio