Description
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Asymmetrical Doherty design
- Main: P3dB = 85 W Typ
- Peak: P3dB = 115 W Typ
• Typical Pulsed CW performance, 3500 MHz, 48 V,
combined outputs
- Output power at P3dB = 200 W
- Efficiency = 60%
- Gain = 12.5 dB
• Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)
output power
• Human Body Model Class 1A, (per ANSI/ESDA/JEDEC
JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant