Description
The GTVA220701FA is a 70-watt (P3dB) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency,
and a thermally-enhanced package with earless flange.
Features
• GaN on SiC HEMT technology
• Input matched
• Typical CW performance, 1880 MHz, 48 V
- Output power at P3dB = 45 W
- Efficiency = 60.7%
- Gain = 21.6 dB
• Human Body Model, Class 1A (per ANSI/ESDA/
JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 40 W (CW)
output power
• RoHS-compliant