Features
• 650 V enhancement mode power transistor
• 850 V transient drain-to-source voltage
• Bottom-cooled, 8x8 mm PDFN package
• RDS(on) = 50 mΩ
• IDS,max = 30 A / IDSmax,Pulse = 60 A
• Simple gate drive requirements (0 V to 6 V)
• Transient tolerant gate drive (-20 V / +10 V)
• High switching frequency (> 1 MHz)
• Fast and controllable fall and rise times
• Reverse conduction capability
• Zero reverse recovery loss
• Source Sense (SS) pin for optimized gate drive
• RoHS 3 (6+4) compliant

Applications
• Bridgeless Totem Pole PFC
• Consumer, Industrial and Datacenter High
Density Power Supply
• High Power Adapters
• LED Lighting Drivers
• Appliance and Industrial Motor Drives
• Solar Inverter
• Uninterruptable Power Supplies
• Laser Drivers
• Wireless Power Transfer

Description
The GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-030-2-L is a bottom-side cooled transistor that offers low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.