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UPD75P068CU Datasheet (PDF) - Renesas Technology Corp

UPD75P068CU Datasheet PDF - Renesas Technology Corp
Part # UPD75P068CU
Download  UPD75P068CU Download
File Size   546.55 Kbytes
Page   42 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD75P068CU Datasheet (PDF)

Go To PDF Page Download Datasheet
UPD75P068CU Datasheet PDF - Renesas Technology Corp

Part # UPD75P068CU
Download  UPD75P068CU Click to download

File Size   546.55 Kbytes
Page   42 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD75P068CU Datasheet (HTML) - Renesas Technology Corp


UPD75P068CU Product details

FEATURES
• Compatible with the mPD75068
• Can be replaced with the mPD75068 containing mask ROM on a full-production basis.
• Internal one-time PROM: 8064 words ´ 8 bits
• Internal RAM: 512 words ´ 4 bits
• Internal pull-up resistors can be specified with software: Ports 0 to 3 and 6
• N-ch open-drain input-output: Ports 4 and 5
• Can operate at low voltage: VDD = 2.7 to 6.0 V




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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