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UPD16818GS Datasheet (PDF) - Renesas Technology Corp
UPD16818GS Datasheet PDF - Renesas Technology Corp
Part # UPD16818GS
Download  UPD16818GS Download
File Size   252.72 Kbytes
Page   17 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD16818GS Datasheet (PDF)

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UPD16818GS Datasheet PDF - Renesas Technology Corp

Part # UPD16818GS
Download  UPD16818GS Click to download

File Size   252.72 Kbytes
Page   17 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS INTEGRATED CIRCUIT

UPD16818GS Datasheet (HTML) - Renesas Technology Corp


UPD16818GS Product details

FEATURES
• Compatible with 3V-/5V- supply voltage
• Pin compatible with μPD16803
• Low ON resistance (sum of ON resistors of top and bottom MOS FETs)
RON1= 1.2 Ω (VM = 3.0 V)
RON2 = 1.0 Ω (VM = 5.0 V)
• Low current consumption: IDD = 0.4 mA TYP. (VDD = 2.7 V to 3.6 V)
• Stop mode function that turns OFF all output MOS FETs
• Drive current can be set in power-saving mode (set by external resistor)
• Compact surface mount package




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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