IXSH16N60U1 Datasheet(PDF) - IXYS Corporation

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IXSH16N60U1 Datasheet (PDF) - IXYS Corporation

IXSH16N60U1 Datasheet PDF - IXYS Corporation


Part #	IXSH16N60U1

Download	IXSH16N60U1 Download

File Size	40.79 Kbytes

Page	2 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Description

Low V CE(sat) IGBT with Diode

IXSH16N60U1 Datasheet (PDF)

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IXSH16N60U1 Datasheet PDF - IXYS Corporation


Part #	IXSH16N60U1

Download	IXSH16N60U1 Click to download

File Size	40.79 Kbytes

Page	2 Pages

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

Description	Low V CE(sat) IGBT with Diode

IXSH16N60U1 Datasheet (HTML) - IXYS Corporation

IXSH16N60U1 Datasheet HTML 1Page - IXYS Corporation

IXSH16N60U1 Datasheet HTML 2Page - IXYS Corporation

IXSH16N60U1 Product details

Features
Latest generation HDMOSTM process
International standard package
Guaranteed Short Circuit SOA
capability
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz

Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding

Similar Part No. - IXSH16N60U1

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXSH10N120AU1	37Kb / 2P	IGBT with Diode
	IXSH10N60	217Kb / 4P	High Speed IGBT - Short Circuit SOA Capability
	IXSH10N60A	217Kb / 4P	High Speed IGBT - Short Circuit SOA Capability
	IXSH10N60B2D1	517Kb / 6P	High Speed IGBT with Diode Short Circuit SOA Capability
	IXSH15N120A	36Kb / 2P	IGBT

Similar Description - IXSH16N60U1

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXGH28N60BD1	57Kb / 2P	Low VCE(sat) IGBT with Diode
	IXGH17N100U1	113Kb / 6P	Low VCE(sat) IGBT with Diode High speed IGBT with Diode
	IXGH15N120BD1	56Kb / 2P	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
	IXGH12N100	151Kb / 5P	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
	IXGH10N100U1	121Kb / 6P	Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
	IXGH31N60U1	46Kb / 2P	Ultra-Low VCE(sat) IGBT with Diode
	IXGH38N60U1	46Kb / 2P	Ultra-Low VCE(sat) IGBT with Diode
	IXSA16N60	48Kb / 2P	Low V CE(sat) IGBT - Short Circuit SOA Capability
	IXSH20N60U1	112Kb / 6P	Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
	IXGR60N60U1	118Kb / 5P	LowV-CE(sat) IGBT with Diode ISOPLUS247-TM (Electrically Isolated Back Surface)

About IXYS Corporation

IXYS Corporation is a technology company that specializes in the design, manufacture, and sale of power semiconductors and integrated circuits (ICs). The company was founded in 1983 and is headquartered in Milpitas, California. IXYS has a global presence, with operations and customers in over 60 countries around the world.

IXYS provides a wide range of products and solutions, including power MOSFETs, power bipolar transistors, thyristors, diodes, and ICs for power management and control applications. The company's products are used in a variety of applications, including renewable energy, industrial, automotive, and consumer electronics.

IXYS is known for its expertise in power semiconductor technology and its ability to provide high-performance and cost-effective solutions to its customers. The company is committed to innovation and research and development and is actively involved in the development of new technologies and solutions for the power semiconductor market. IXYS is a recognized leader in the power semiconductor market and continues to provide high-quality products and services to its customers.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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