Distinctive characteristics
• CMOS 3.0 V core with Versatile I/O™
• Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full
specifications)
• 65-nm MIRRORBIT™ process technology
• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)
• Versatile I/O feature
- Wide I/O voltage (VIO): 1.65 V to VCC
• ×16 data bus
• 16-word/32-byte page read buffer
• 512-byte programming buffer
- Programming in page multiples, up to a maximum of 512 bytes
• Sector erase
- Uniform 128-KB sectors
- S70GL02GS: two thousand forty-eight sectors
• Suspend and Resume commands for Program and Erase operations
• Status Register, data polling, and Ready/Busy pin methods to determine device status
• Advanced sector protection (ASP)
- Volatile and non-volatile protection methods for each sector
• Separate 1024-bye one time program (OTP) array with two lockable regions
- Available in each device Support for common flash interface (CFI)
• WP# input
- Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings
• Temperature range:
- Industrial temperature range (–40°C to +85°C)
- Automotive AEC-Q100 grade 3 (–40°C to +85°C)
- Automotive AEC-Q100 grade 2 (–40°C to +105°C)
• 100,000 erase cycles per sector typical
• 20-year data retention typical
• Packaging options
- 64-ball LSH Fortified BGA, 13 mm  11 mm