STBV36135AY2 Datasheet(PDF)

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STBV36135AY2 Datasheet (PDF) - Innogration Technologies, Inc.


Part #	STBV36135AY2

Download	STBV36135AY2 Download

File Size	1087.32 Kbytes

Page	5 Pages

Manufacturer	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

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Description

Gallium Nitride 50V, 135W,3.3-3.8GHz RF Power Transistor

STBV36135AY2 Datasheet (PDF)

Download Datasheet


Part #	STBV36135AY2

Download	STBV36135AY2 Click to download

File Size	1087.32 Kbytes

Page	5 Pages

Manufacturer	INNOGRATION [Innogration Technologies, Inc.]

Direct Link	http://www.innogration.net/index.htm

Logo

Description	Gallium Nitride 50V, 135W,3.3-3.8GHz RF Power Transistor

STBV36135AY2 Datasheet (HTML) - Innogration Technologies, Inc.

STBV36135AY2 Datasheet HTML 1Page - Innogration Technologies, Inc.

STBV36135AY2 Datasheet HTML 2Page - Innogration Technologies, Inc.

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STBV36135AY2 Datasheet HTML 4Page - Innogration Technologies, Inc.

STBV36135AY2 Datasheet HTML 5Page - Innogration Technologies, Inc.

STBV36135AY2 Product details

Description
The STBV36135AY2 is a single ended 135watt, GaN HEMT, ideal for applications from 3.3 to 3.8GHz.
It is an input matched transistor capable to support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 Sub-4GHz pulse or CW amplifier
 5G base station amplifier
 S band Jammer

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