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STBV38100E2 Datasheet (PDF) - Innogration Technologies, Inc.

STBV38100E2 Datasheet PDF - Innogration Technologies, Inc.
Part # STBV38100E2
Download  STBV38100E2 Download
File Size   1290.31 Kbytes
Page   7 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 100W, 0.1-4.2GHz RF Power Transistor

STBV38100E2 Datasheet (PDF)

Go To PDF Page Download Datasheet
STBV38100E2 Datasheet PDF - Innogration Technologies, Inc.

Part # STBV38100E2
Download  STBV38100E2 Click to download

File Size   1290.31 Kbytes
Page   7 Pages
Manufacturer  INNOGRATION [Innogration Technologies, Inc.]
Direct Link  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Description Gallium Nitride 50V, 100W, 0.1-4.2GHz RF Power Transistor

STBV38100E2 Datasheet (HTML) - Innogration Technologies, Inc.


STBV38100E2 Product details

Description
The STBV38100E2 is a 100watt, GaN HEMT, ideal for general applications from 0.1 to 4.2GHz.
It can support CW, pulse or any modulated signal.
It features high gain, wide band and low cost, in 6.5*6.5mm ceramic package with copper flange.
Its gullwing leads enable surface mounted on PCB through grounding vias or soldered on heatsink
There is no guarantee of performance when this part is used outside of stated frequencies.

Applications
 5G, 4G wireless infrastructure
 S band power amplifier
 Test instruments
 Jammer




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