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SLG46116V Datasheet (PDF) - Renesas Technology Corp

SLG46116V Datasheet PDF - Renesas Technology Corp
Part # SLG46116V
Download  SLG46116V Download
File Size   1477.06 Kbytes
Page   90 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description Programmable Mixed-signal Matrix with P-FET Power Switch w/o Discharge

SLG46116V Datasheet (PDF)

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SLG46116V Datasheet PDF - Renesas Technology Corp

Part # SLG46116V
Download  SLG46116V Click to download

File Size   1477.06 Kbytes
Page   90 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description Programmable Mixed-signal Matrix with P-FET Power Switch w/o Discharge

SLG46116V Datasheet (HTML) - Renesas Technology Corp


SLG46116V Product details

Features
• Logic & Mixed Signal Circuits
• Highly Versatile Macrocells
• Read Back Protection (Read Lock)
• 1.8 V (±5 %) to 5 V (±10 %) Supply
• Operating Temperature Range -40 °C to 85 °C
• Soft-Start 1.25 A (@VIN = 3.3 V) P-FET Power Switch
• Package
• 1.6 x 2.5 x 0.55 mm STQFN 14L package
• Pb-Free / Halogen-Free / RoHS compliant




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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