RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
   Pout = 8 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts,
   10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
   on CCDF.
      Power Gain — 26 dB
      Power Added Efficiency — 17%
      Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
      ACPR @ 8.5 MHz Offset — -49 dBc in 1 MHz Channel Bandwidth

Driver Applications
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
   Pout = 4 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 10 MHz
   Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
   CCDF.
      Power Gain — 26 dB
      Power Added Efficiency — 11%
      Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
      ACPR @ 8.5 MHz Offset — -57 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 50 Watts CW Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 80 W CW Pout
• Pout @ 1 dB Compression Point  50 Watts CW

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.