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BCV26 Datasheet (PDF) - NXP Semiconductors

BCV26 Datasheet PDF - NXP Semiconductors
Part # BCV26
Download  BCV26 Download
File Size   122.64 Kbytes
Page   7 Pages
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors
Description PNP Darlington transistors

BCV26 Datasheet (PDF)

Go To PDF Page Download Datasheet
BCV26 Datasheet PDF - NXP Semiconductors

Part # BCV26
Download  BCV26 Click to download

File Size   122.64 Kbytes
Page   7 Pages
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors
Description PNP Darlington transistors

BCV26 Datasheet (HTML) - NXP Semiconductors


BCV26 Product details

DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.

FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• Very high DC current gain (min. 10000).

APPLICATIONS
• Where very high amplification is required.




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About NXP Semiconductors


NXP Semiconductors is a publicly traded multinational company that designs, develops, and manufactures a wide range of semiconductors and integrated circuits for various applications, including automotive, industrial, communications, and consumer markets.

The company was founded in 2006 and is headquartered in Eindhoven, Netherlands.

NXP offers a broad portfolio of products, including microcontrollers, microprocessors, secure authentication ICs, power management ICs, RF and microwave components, and sensor solutions, among others.

The company's products are designed to be energy efficient, secure, and reliable, and are used in a variety of applications, including automotive systems, industrial automation and control, smart homes and buildings, and connected devices.

NXP is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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