General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
   of 32 V, an IDq of 25 mA, a tp of 100 μs and a δ of 10 %:
   ◆ Output power = 6 W
   ◆ Power gain = 15 dB
   ◆ Efficiency = 33 %
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (2.7 GHz to 3.1 GHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)

Applications
■ S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
   range