Linear Low Noise SiGe:C Bipolar RF Transistor

• High gain ultra low noise RF transistor
• Based on Infineons reliable high volume Silicon
   Germanium technology
• Provides outstanding performance for a wide range
   of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P-1dB for driver stages
• High maximum stable and available gain
   Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free very thin
   small leadless package (package height 0.32 mm max.
   ideal for modules)
• Qualification report according to AEC-Q101 available